个人资料
个人简介2022年12月获西安交通大学博士学位，主要从事流体机械内部流动理论研究与系统仿真研究，以及动力学蒙特卡洛算法的应用研究工作，特别是在第三代半导体（SiC、GaN等）晶体生长过程的动力学蒙特卡洛微观数值模拟方面积累了丰富的研究经验。在Journal of Applied Physics, Computational Materials Science, Journal of Vacuum Science and Technology A，Vacuum等国际知名期刊上发表学术论文13篇，担任Journal of Crystal Growth，Crystal Growth & Design等期刊审稿人。 社会职务研究领域 1.晶体生长微观数值模拟与理论研究
2.流体机械设计、优化及数值仿真研究 开授课程 《流体力学》
科研项目1）MOCVD生长GaN跨尺度数值模拟研究项目，主持，企业合作课题；（在研） 2）碳化硅晶体HTCVD外延生长过程多尺度数值模拟，主持，企业合作课题；（在研） 3）基于动力学蒙特卡洛方法的碳化硅晶体外延生长形貌失稳机理研究，主持，中央高校基本科研业务；（在研） 4）车用燃料电池冷启动阴极催化层内水冰相变与组分传递耦合机理的微纳尺度研究，参与，国家自然科学基金地区科学基金项目；（在研） 论文1. Wensen Ai, Xuejiang Chen, Jianmei Feng. Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A Kinetic Monte Carlo study. Journal of Applied Physics. 131 (2022) 125304. 2. Wensen Ai, Xuejiang Chen, Jianmei Feng. Early stage nucleation mechanism for SiC(0001) surface epitaxial growth. Journal of Vacuum Science and Technology A. 40 (2022) 033201. 3. Wensen Ai, Xuejiang Chen, Yuan Li, Hao Zhao. Application of self- consistent rate equations approach for SiC (0001) surface epitaxial growth. Computational Materials Science 188 (2021) 110253. 4. Wensen Ai, Xuejiang Chen. Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage. Journal of Vacuum Science and Technology A 41 (2023) 4. 5. Xuejiang Chen, Wensen Ai, Hao Zhao, Yuan Li, Jianmei Feng. Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A kinetic Monte Carlo study. Vacuum 188 (2021) 110189. 6. Peng Su, Wensen Ai, Xuejiang Chen, Lijun Liu. Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth. Journal of Vacuum Science and Technology A, 41（2023）062704. 7. Xuejiang Chen, Hao Zhao, Wensen Ai. Study on the competitive growth mechanism of SiC polytypes using Kinetic Monte Carlo method. Journal of Crystal Growth 599 (2021) 126042. 8. Yuan. Li, Xuejiang. Chen, Wensen Ai. Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces. Computational Materials Science 197 (2021) 110607. 9. Xuejiang Chen, Qian Xia, Hao Zhao, and Wensen Ai. Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method. Physica Status Solidi B 260 (2023) 2200307. 10. Xuejiang Chen, Xinyao Zhang, Wensen Ai, Yishan Lin. Investigation on the mechanism of instability for step morphology during 3C-SiC (111) vicinal surface epitaxial growth. Applied Surface Science 684 (2025) 161788. 11. Yuan. Li, Xuejiang. Chen, Wensen Ai. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC(0001) growth. Journal of Crystal Growth 617 (2023) 127291 12 Xuejiang Chen, Xinyao Zhang, Wensen Ai. Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface. Journal of Vacuum Science and Technology A 42 (2024) 022703 13. Qian Xia , Xuejiang Chen, Wensen Ai. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal. Journal of Crystal Growth 612 (2023) 127195 科技成果荣誉奖励工作经历 2016.8-2018.8 先后任职于法士特汽车传动工程研究院，青岛海信日立空调系统有限公司
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