徐小波 副教授

电子与控制工程学院

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学位: 博士

毕业院校: 西安电子科技大学

邮件: xuxiaobo@chd.edu.cn

电话: 029-82339348

出生年月: 1983-11-15

办公地点: 雁塔校区第二教学楼

个人资料

  • 学院: 电子与控制工程学院
  • 性别:
  • 出生年月: 1983-11-15
  • 职称: 副教授
  • 学位: 博士
  • 学历: 博士
  • 毕业院校: 西安电子科技大学
  • 联系电话: 029-82339348
  • 电子邮箱: xuxiaobo@chd.edu.cn
  • 通讯地址:
  • 邮编:
  • 传真:
  • 办公地址: 雁塔校区第二教学楼
  • 教育经历:

个人简介

徐小波,男,39,博士,副教授,20093月毕业于西安电子科技大学微电子学院,获硕士学位,硕士论文题目《MEMS传感器弱信号检测电路及集成设计》,20123月获西安电子科技大学微电子学与固体电子学博士学位,博士论文题目《SOI SiGe HBT性能与结构设计研究》,现在长安大学电子与控制工程学院机器人工程系从事科研和教学。近几年主持国家自然科学基金、博士后科学基金、陕西省自然科学青年基金、陕西省自然科学青年基金等,参与项目多项。在IEEE Transactions on Electrons DevicesSolid State ElectronicsSuperlattices and MicrostructuresChinese Physics BChinese Physics Letters等期刊公开发表第一作者学术论文20余篇,其中14SCI收录,6EI收录


当前主要研究领域或方向为机器学习:

(1) 自然语言处理(NLP)方向,主要为表格预测(tabular prediction); 

(2) 生成深度网络:主要为对抗生成网络(GAN)和扩散模型(diffusion model)。

(3) 目标检测。主要为U网络(U-Net)和可变形卷积网络(deformable ConvNet)




社会职务

研究领域

研究方向为深度学习:

1、图像类:

(1)、对抗生成网络、扩散模型,应用场景为单样本/少样本情况下图像生成与识别。

(2)、语义分割/模式识别,应用场景为小样本情况下缺陷识别。

2、时间序列类:Transformer网络,应用场景为基于大样本、基于注意力机制的表格数据预测。





开授课程


2022-2023学年当前及未来教授课程:


自动控制原理(自动化核心课,考研课程)

面向对象程序设计(基于VS2019、VS2022的界面编程)

自然语言处理(2022机器人工程新大纲课程,机器学习方向扩展课程,实现时间序列的深度学习网络,如RNN、LSTM、Seq2Seq、Transformer等)

生成深度学习:让机器学习绘画(全校公选课,生成类神经网络入门)

数字信号处理(2022机器人工程新大纲课程,机器学习方向核心课程)

科研项目

公路隧道典型火灾场景下风机控制方案应用研究,浙江诸永高速公路有限公司诸暨分公司,项目号:暂无,2022.12.07-2023.12.31,参与(第二),经费60.17万,在研。

基于机器学习的无线电辐射源射频指纹识别技术研究,宁夏无线电管理委员会办公室,项目号: 211832220047,2021.11.01-2023.06.01,参与(第二),经费18万,在研。

超细球形纳米银粉体技术开发,西安理工大学,220132210558,2021.05.21-2022.05.21,参与(第二),经费4.5万,已结题。

NB-IoT系统频谱共享与干扰机制研究,全国无线电管理“十四五”规划前期重大研究课题联合申请,资助号:2118321905102019.01-2020.12, 主持,分解经费27万,已结题

高性能SOI横向对称三极管机理研究,陕西省自然科学基金,资助号:2018JM60672018.01-2019.12,主持,经费3万,已结题。

一种黄铜过滤材料的烧结技术开发,陕西速源节能科技有限公司,项目号:220232180417,2018.11.01-2020.10.31,参与(第二),经费5万,已结题。

SOI横向对称三极管电学参数研究,中央高校基本科研业务费专项资金,资助号:300102328111,2018.01.01-2019.12.31,主持,经费5万,已结题。

高性能薄膜SOI硅锗异质结晶体管机理研究,国家自然科学基金,资助号:615040112016.01-2018.12, 主持,经费22.6万,已结题

SOI集电结耗尽SiGe HBT关键参数研究,陕西省自然科学基金, 资助号: 2014JQ8344, 2014.05-2017.01, 主持,经费3万,已结题。

长安大学2018年中央高校“双一流”引导专项资金本科教学建设项目:基于AMPS软件实现《半导体光伏技术》教学的探索,资助号:3001042832142018.012019.12,主持,1万,已结题。

低辐照对钙钛矿太阳电池的影响研究, 长安大学研究生科研创新实践项目,2018.062018.12。指导教师。


论文



Xiao-Bo XuWen-Ping Gu, Xiaoyan-Wang, Lin-Zhang, and Zan Zhang, Influence of low intensity on cell performance of CdTe solar cells, Materials, 2020, 13(9), 2194(1)-2194(11).

Xiaobo Xu, Xiaocheng Zhang, Zhaowu Huang, Shaoyou Xie, Wenping Gu, Xiaoyan Wang, in Zhang and Zan Zhang Current Characteristics Estimation of Si PV Modules Based on Artificial Neural Network Modeling, Materials, 2019, 12(9), 3037(1)-3037(12)

Xiao-Bo Xu,Wen-Ping Gu, Si Quan, Zan Zhang, Lin Zhang. Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs. Superlattices and Microstructures, 2017. 603-609 

Xiao-Bo Xu,Xiao-Yan Wang, Wen-Ping Gu, Si Quan, Zan Zhang. Study on influences of CdZnS buffer layer on CdTe solar cells. Superlattices and Microstructures, 109, 2017, 463-469 

Xiaobo Xu,Xiaoyan Wang, Wenping Gu, Si Quan. Current Crowding Effect of Equilateral Polygon Emitter Transistors. IEEE Transactions on Electron Devices,64(6), 2017, 2770-2772. 

徐小波,张林,王晓艳, 谷文萍,胡辉勇, 葛建华, Si和SiGe三极管Early效应电路仿真模型综述,电子学报, 44(7),2016, pp 1763-1771 

徐小波,王晓艳, 谷文萍, 张林, 全思, 葛建华, 低光强下CdTe太阳电池的性能研究. 半导体光电, 37(6), 2016, pp 796-799.

徐小波,王晓艳,李艳波,胡辉勇,葛建华, SOI SiGe HBT集电结渡越时间模型研究,微电子学, 45(5), 2015, pp 681-684.

Xu Xiao-Bo, Zhang Bin, Yang Yin-Tang, and Li Yue-Jin, An analytical model of SiGe heterojunction bipolar transistors on SOI substrate for large current situation, Chinese Physics Letters, 2013, 30(2): 028502-1~4; 

Xiao-Bo Xu He-Ming Zhang, Hui-Yong Hu, and Jiang-Tao Qu, Early effect of SiGe heterojunction bipolar transistors, Solid State Electronics, 2012, 72(6): 1-3; 

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, Ma Jian-Li), and Xu Li-Jun, Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator, Chinese Physics B, 2011 20(1): 018502-1~5; 

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Ma Jian-li, Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics B, 2011 20(5): 058502-1~6; 

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Qu Jiang-tao, Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator, Chinese Physics B, 2011 20(5): 058503-1~5; 

Xu Xiao-Bo, and Zhang He-Ming, An analytical avalanche multplcation model for partially depleted silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics letters, 2011 28(7): 078505-1~4; 

Xu Xiao-Bo, Xu Kai-Xuan, Zhang He-Ming, and Qin Shan-Shan A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects, Chinese Physics B, 2011 20(9): 098501-1~5; 

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, Li Yu-Chen, and Qu Jiang-Tao, Weak avalanche multiplication in SiGe HBTs on thin film SOI, Chinese Physics B, 2011 20(10): 108502-1~6; 

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jianli Ma, and Lijun Xu, Generalized Early voltage model of bipolar transistors for linearly graded germanium in base, Applied Mechanics and Materials, 2012 110-116: 3311-3315; 

Xiaobo Xu, Heming Zhang, Huiyong Hu, Shanshan Qin, and Jiangtao Qu, Collector resistance of accumulation-subcollector transistors for SOI SiGe BiCMOS technology, Applied Mechanics and Materials, 2012 110-116: 5452-5456; (EI)

徐小波,张鹤鸣,胡辉勇,许立军,马建立,SOI部分耗尽SiGe HBT 集电结空间电荷区模型,物理学报,2011 60(7): 078502-1~9; 

徐小波,张鹤鸣,胡辉勇,SOI部分耗尽SiGe HBT 集电结耗尽电荷和电容改进模型,物理学报,2011 60(11): 118501-1~5; 

Xiaobo Xu, Kaixuan Xu, and Heming Zhang, Collector depletion region investigation of SOI SiGe HBTs, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 2039-2043; 

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jiangtao Qu, Jianli Ma, and Shanshan Qin, Negative substrate bias effects on collector resistance in SiGe HBTs on thin film SOI, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 2380-2382; 

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jiangtao Qu, and Jianli Ma, Weak avalanche multiplication model for fully depleted silicon-on-insulator SiGe heterojunction bipolar transistors, IEEE 2010 International Conference on Modeling, Simulation and Control (ICMSC 2010), Cairo, Egypt, 2010.11; 

Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Wang Guan-Yu, Wang Xiao-Yan, Xu Xiao-Bo, and Qu Jiang-Tao, A two-dimensional subthreshold current model for strained-Si MOSFET, Science in China: Series G,2011, 54(12): 21811~2185; 

Qin Shanshan Zhang Heming, Hu Huiyong, Xu Xiaobo, and Wang Xiaoyan, An analytical model for the subthreshold current of fully depleted strained-SOI MOSFET , Applied Mechanics and Materials, 2012, 110-116: 3332-3337; 

Song Jian Jun, Shan Heng Sheng, Zhang He Ming, Hu Hui Yong, Wang Guan Yu, Ma Jian Li, Xu Xiao Bo, Model of DOS near the top of valence band in strained Si1-xGex/(001)Si, Recent Trends in Materials and Mechanical Engineering Materials, Mechatronics and Automation, 2011, 55-57: 979-982; 

Qu Jiangtao, Zhang, Heming, Hu, Huiyong, Xu, Xiaobo, Wang, Guan-Yu, and Wang, Xiao-Yan, The impact of Drain-Induced Barrier Lowering effect on threshold voltage for small-scaled strained Si/SiGe nMOSFET, Applied Mechanics and Materials, 2012, 110-116: 5457-5463; 

Qu Jiang Tao, Zhang He Ming, Xu Xiao Bo, and Qin Shan Shan, Study of Drain Induced Barrier Lowering(DIBL) effect for strained Si Nmosfet, Procedia Engineering, 2011, 16: 298-305; 

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, and Hu Hui-Yong, Study of threshold voltage modeling for small-scaled strained Si nMOSFET, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 4507-4510;

屈江涛,张鹤鸣,秦珊珊,徐小波,王晓艳,胡辉勇,小尺寸应变Si NMOSFET物理模型的研究,物理学报,2011,60(9): 098501-1~7; 

屈江涛,张鹤鸣,胡辉勇,徐小波,王晓艳,小尺寸应变Si/SiGe PMOSFET阈值电流电压特性的研究,电子科技大学学报, 2012, 41(2): 311-316;

张滨,杨银堂,李跃进,徐小波,SOI SiGe HBT电学性能研究,物理学报,2012, 61(23), 238502-1~9;

Jian-Li Ma, He-Ming Zhang, Jian-Jun Song, Qun Wei, Xiao-Yan Wang, Guan-Yu Wang, and Xiao-Bo Xu, Energy Band Structure of Silicon Under Uniaxial Stress in the (110) Plane Along an Arbitrary Direction, Chinese Journal of Physics 2011, 49(6): 1244~1254; 

马建立,张鹤鸣,宋建军,王晓艳,王冠宇,徐小波,单轴<111>应力硅价带结构计算,物理学报 2011,60(8): 087101-1~8 

Jian-Li Ma, He-Ming Zhang, Xiao-Yan Wang, Qun Wei, Guan-Yu Wang and Xiao-Bo Xu, Valence band structure and hole effective mass of uniaxial stressed Germanium, Journal of Computational Electronics, 2011, 10(4): 388-393; 

Ma Jianli, Zhang Heming, Song Jianjun, Wang Guanyu, Wang Xiaoyan, and Xu Xiaobo. Impact of [110]/(001) uniaxial stress on valence band structure and hole effective mass of silicon, 2011, Journal of Semiconductors, 32(2): 022002-1~5;

Xu Li-Jun, Zhang He-Ming, Hu Hui-Yong, Xu Xiao-Bo, and Ma, Jian-Li, The study of direct tunneling current in strained MOS device with silicon nitride stack gate dielectric, Applied Mechanics and Materials, 2012, 110-116: 5442-5446; 

Xu Li-Jun, Zhang He-Ming, Hu Hui-Yong, Xu Xiao-Bo, and Ma, Jian-Li, The study of parallel strain distribution in channel of PMOSFET with silicon-germanium source and drain regions, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 4677-4680; 

Yuchen Li, Heming Zhang, Huiyong Hu, Xiaobo Xu, Chunyu Zhou, and Bin Wang, A Compact Threshold Voltage Model for the Novel High-Speed Semiconductor Device IMOS, 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC 2011), 2011, 1-2;

李妤晨,张鹤鸣,张玉明,胡辉勇,徐小波,秦珊珊,王冠宇,新型高速半导体器件IMOS阈值电压解析模型,物理学报,2012,61(4):047303-1~5;




科技成果

荣誉奖励

工作经历

2012.04至今,长安大学,电子与控制工程学院,教师